| Pro-Electron or EECA Numbering Coding System | |||
| First letter | Second letter | Subsequent characters | Suffix |
| A = Germanium | A = Diode - low power or signal | A10 - Z99 | A = low gain |
| B = Silicon | B = Diode - variable capacitance | B = medium gain | |
| C = Gallium Arsenide | C = Transistor - audio frequency, low power | C = high gain | |
| R = Compound materials | D = Transistor - audio frequency, power | No suffix = gain unclassified | |
| E = Tunnel diode | |||
| F = Transistor - high frequency, low power | |||
| G = Miscellaneous devices | |||
| H = Diode - sensitive to magnetism | |||
| L = Transistor - high frequency, power | |||
| N = Photocoupler | |||
| P = Light detector | |||
| Q = Light emitter | |||
| R = Switching device, low power, e.g. thyristor, diac, unijunction | |||
| S = Transistor - switching low power | |||
| T = Switching device, low power, e.g. thyristor, triac | |||
| U = Transistor - switching, power | |||
| W = Surface acoustic wave device | |||
| X = Diode multiplier | |||
| Y = Diode rectifying | |||
| Z = Diode - voltage reference | |||
| JEDEC Numbering or Coding System | |||
| 1 = Diode | SA = PNP high frequency bipolar transistor | 10 to 9999 | |
| 2 = Bipolar transistor or single gate field effect transistor | SB = PNP audio frequency bipolar transistor | ||
| 3 = Dual gate field effect transistor | SC = NPN high frequency bipolar transistor | ||
| SD = NPN audio frequency bipolar transistor | |||
| SE = Diodes | |||
| SF = Thyristor (SCR) | |||
| SG = Gunn devices | |||
| SH = UJT (Unijunction transistor) | |||
| SJ = P-channel JFET / MOSFET | |||
| SK = N-channel JFET / MOSFET | |||
| SM = Triac | |||
| SQ = LED | |||
| SR = Rectifier | |||
| SS = Signal diode | |||
| ST = Avalanche diode | |||
| SV = Varactor diode / varicop diode | |||
| SZ = Zener diode / voltage reference diode | |||